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Not only the sputtering targets, semiconductor materials and single crystals, but also the other products.  

Phone +81-3-3762-8161,

Tokyo Japan

GaN Template

We started to sell GaN template manufactured by Suzhou Nanowin Science and Technology Co., Ltd. Please send us inquiry.

GaN templaes are used for III-V Nitrides epitaxial growth substrates in MBE, CVD and MOCVD.
GaN epitaxial growth can be done on Sapphire substrates below
,

> Undoped GaN


Application

  • Ideal for GaN homoepitaxial growth and device production
  • Superior material for manufacture, developmint and basic research
  • Suitable substrate for GaN base, blue, green, white and UV LED
  • They are for III-V base Nitride epigrowth by MBE, CVD or MOCVD
  • Thick GaN will be used for manufacturing high luminance LED with using Laser Lift Off

2" GaN templates

ITEM GaN-T-C-U-C50 GaN-T-C-N-C50 GaN-T-C-P-C50
Dimensions Φ 50.8mm ±0.1mm
Thickness 4 μm, 20 μm 4 μm
Orientation C-Plane(0001) ±0.5°
Conduction Type N-type (Undoped) N-type (Si-doped) P-type (Mg-doped)
Resistivity(300K) < 0.5 Ω·cm < 0.05 Ω·cm ~10 Ω·cm
Carrier Concentration < 5×1017 cm-3 > 1×1018 cm-3 > 6×1016 cm-3
Mobility ~300 cm2/V·s ~200 cm2/V·s ~10 cm2/V·s
Dislocation Density less than 5×108cm-2
Substrate Structure GaN on Sapphire(Standard:SSP Option:DSP)
Usable Surface Area > 90%
Package Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

4" GaN templates

ITEM GaN-T-C-U-C100 GaN-T-C-N-C100
Dimensions Φ 100mm ±0.1mm
Thickness 4 μm, 20 μm
Orientation C-Plane(0001) ±0.5°
Conduction Type N-type (Undoped) N-type (Si-doped)
Resistivity(300K) < 0.5 Ω·cm < 0.05 Ω·cm
Carrier Concentration < 5×1017 cm-3 > 1×1018 cm-3
Mobility ~300 cm2/V·s ~200 cm2/V·s
Dislocation Density less than 5×108cm-2
Substrate Structure GaN on Sapphire(Standard:SSP Option:DSP)
Usable Surface Area > 90%
Package Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

2" Free-Standing GaN Substrates

ITEM GaN-FS-C-U-C50 GaN-FS-C-N-C50
Dimensions Φ 50.8mm ±0.1mm
Thickness 350 ±25 μm
 Usable Surface Area > 90% 
Orientation C-Plane(0001) off angle towared M-Axis 0.35°±0.15°
 Orientation Flat (1-100) ±0.5°, 16.0 ±1.0 mm 
 Secondary Orientation Flat (11-20) ±3°, 8.0 ±1.0 mm
 TTV(Total Thickness Variation) ≤15 μm
 BOW  ≤20 μm
Conduction Type N-type (Undoped) N-type (Ge-doped)
Resistivity(300K) < 0.5 Ω·cm < 0.05 Ω·cm
Dislocation Density less than 5×108cm-2
Polishing Front Surface: Ra < 0.2 nm; Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

Free-standing GaN Substrates (Customized Size)

ITEM GaN-FS-C-U-S10 10 GaN-FS-C-N-S10 10
Dimensions 10.0 mm ×10.5 mm; ±0.2 mm
Thickness 350 ±25 μm
Orientation C-Plane(0001) off angle towared M-Axis 0.35°±0.15°
 TTV(Total Thickness Variation) ≤10 μm
 BOW  ≤10 μm
Conduction Type N-type (Undoped) N-type (Ge-doped)
Resistivity(300K) < 0.5 Ω·cm < 0.05 Ω·cm
Dislocation Density less than 5×108cm-2
 Usable Surface Area > 90% 
Polishing Front Surface: Ra < 0.2 nm; Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

Non-Polar and Semi-Polar Freestanding GaN Substrates

ITEM GaN-FS-A-U/N/SI-S GaN-FS-M-U/N/SI-S
Dimensions 5.0 ~ 10.0 mm ×10.0 mm; ±0.2 mm
5.0 ~ 10.0 mm ×20.0 mm; ±0.2 mm
Thickness 350 ±25 μm
Orientation A-Plane(11-20) off angle towared C-Axis -1°±0.2° M-Plane(1-100) off angle towared C-Axis -1°±0.2°
 TTV(Total Thickness Variation) ≤10 μm
 BOW  ≤10 μm
Conduction Type
Resistivity(300K)
N-type (Undoped)  < 0.5 Ω·cm
N-type (Undoped)  < 0.05 Ω·cm
Semi-Insulating(Fe-doped)  > 104 Ω·cm
Dislocation Density less than 5×108cm-2
 Usable Surface Area > 90% 
Polishing Front Surface: Ra < 0.2 nm; Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

2" AIN Templates

ITEM AIN-T-C-C50
Dimensions Φ 50.8 mm ±0.1 mm
Substrate Sapphire (Single Side Polished)
Thickness 4 ~ 5 μm
Orientation C-plane (0001) ±0.5°
Conduction Type Semi-Insulating
Crystalline Quality XRD FWHM of (0002) < 350 arcsec
XRD FWHM of (10-12) <450 arcsec
 Exclusion Zone < 2 mm
 Surface Roughness Ra < 1.5 nm (10 μm × 10 μm)
Package Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

Sales agent: Furuuchi Chemical Corporation
6-17-17 Minami-Oi Shinagawa-ku
Tokyo, 140-0013
Phone 03-3762-8161
Faximile 03-3766-8310

All specifications are subject to change without notice. III-Nitride templates are grown on best-effort bases. Characterization data may not be available to all template types.

Furuuchi Chemical Co.

6-17-17 Minami-Oi Shinagawa-ku
Tokyo, 140-0013, Japan

Business hours
Weekdays 9:00-17:00