Phone +81-3-3762-8161,
Tokyo Japan
We started to sell GaN template manufactured by Suzhou Nanowin Science and Technology Co., Ltd. Please send us inquiry.
GaN templaes are used for III-V Nitrides epitaxial growth substrates in
MBE, CVD and MOCVD. |
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ITEM | GaN-T-C-U-C50 | GaN-T-C-N-C50 | GaN-T-C-P-C50 | |||
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Dimensions | Φ 50.8mm ±0.1mm | |||||
Thickness | 4 μm, 20 μm | 4 μm | ||||
Orientation | C-Plane(0001) ±0.5° | |||||
Conduction Type | N-type (Undoped) | N-type (Si-doped) | P-type (Mg-doped) | |||
Resistivity(300K) | < 0.5 Ω·cm | < 0.05 Ω·cm | ~10 Ω·cm | |||
Carrier Concentration | < 5×1017 cm-3 | > 1×1018 cm-3 | > 6×1016 cm-3 | |||
Mobility | ~300 cm2/V·s | ~200 cm2/V·s | ~10 cm2/V·s | |||
Dislocation Density | less than 5×108cm-2 | |||||
Substrate Structure | GaN on Sapphire(Standard:SSP Option:DSP) | |||||
Usable Surface Area | > 90% | |||||
Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. |
ITEM | GaN-T-C-U-C100 | GaN-T-C-N-C100 | ||||
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Dimensions | Φ 100mm ±0.1mm | |||||
Thickness | 4 μm, 20 μm | |||||
Orientation | C-Plane(0001) ±0.5° | |||||
Conduction Type | N-type (Undoped) | N-type (Si-doped) | ||||
Resistivity(300K) | < 0.5 Ω·cm | < 0.05 Ω·cm | ||||
Carrier Concentration | < 5×1017 cm-3 | > 1×1018 cm-3 | ||||
Mobility | ~300 cm2/V·s | ~200 cm2/V·s | ||||
Dislocation Density | less than 5×108cm-2 | |||||
Substrate Structure | GaN on Sapphire(Standard:SSP Option:DSP) | |||||
Usable Surface Area | > 90% | |||||
Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. |
ITEM | GaN-FS-C-U-C50 | GaN-FS-C-N-C50 | ||||
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Dimensions | Φ 50.8mm ±0.1mm | |||||
Thickness | 350 ±25 μm | |||||
Usable Surface Area | > 90% | |||||
Orientation | C-Plane(0001) off angle towared M-Axis 0.35°±0.15° | |||||
Orientation Flat | (1-100) ±0.5°, 16.0 ±1.0 mm | |||||
Secondary Orientation Flat | (11-20) ±3°, 8.0 ±1.0 mm | |||||
TTV(Total Thickness Variation) | ≤15 μm | |||||
BOW | ≤20 μm | |||||
Conduction Type | N-type (Undoped) | N-type (Ge-doped) | ||||
Resistivity(300K) | < 0.5 Ω·cm | < 0.05 Ω·cm | ||||
Dislocation Density | less than 5×108cm-2 | |||||
Polishing | Front Surface: Ra < 0.2 nm; Epi-ready polished Back Surface: Fine ground |
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Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. |
ITEM | GaN-FS-C-U-S10 10 | GaN-FS-C-N-S10 10 | ||||
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Dimensions | 10.0 mm ×10.5 mm; ±0.2 mm | |||||
Thickness | 350 ±25 μm | |||||
Orientation | C-Plane(0001) off angle towared M-Axis 0.35°±0.15° | |||||
TTV(Total Thickness Variation) | ≤10 μm | |||||
BOW | ≤10 μm | |||||
Conduction Type | N-type (Undoped) | N-type (Ge-doped) | ||||
Resistivity(300K) | < 0.5 Ω·cm | < 0.05 Ω·cm | ||||
Dislocation Density | less than 5×108cm-2 | |||||
Usable Surface Area | > 90% | |||||
Polishing | Front Surface: Ra < 0.2 nm; Epi-ready polished Back Surface: Fine ground |
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Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. |
ITEM | GaN-FS-A-U/N/SI-S | GaN-FS-M-U/N/SI-S | ||||
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Dimensions | 5.0 ~ 10.0 mm ×10.0 mm; ±0.2 mm | |||||
5.0 ~ 10.0 mm ×20.0 mm; ±0.2 mm | ||||||
Thickness | 350 ±25 μm | |||||
Orientation | A-Plane(11-20) off angle towared C-Axis -1°±0.2° | M-Plane(1-100) off angle towared C-Axis -1°±0.2° | ||||
TTV(Total Thickness Variation) | ≤10 μm | |||||
BOW | ≤10 μm | |||||
Conduction Type Resistivity(300K) |
N-type (Undoped) < 0.5 Ω·cm | |||||
N-type (Undoped) < 0.05 Ω·cm | ||||||
Semi-Insulating(Fe-doped) > 104 Ω·cm | ||||||
Dislocation Density | less than 5×108cm-2 | |||||
Usable Surface Area | > 90% | |||||
Polishing | Front Surface: Ra < 0.2 nm; Epi-ready polished Back Surface: Fine ground |
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Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. |
ITEM | AIN-T-C-C50 | |||||
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Dimensions | Φ 50.8 mm ±0.1 mm | |||||
Substrate | Sapphire (Single Side Polished) | |||||
Thickness | 4 ~ 5 μm | |||||
Orientation | C-plane (0001) ±0.5° | |||||
Conduction Type | Semi-Insulating | |||||
Crystalline Quality | XRD FWHM of (0002) < 350 arcsec XRD FWHM of (10-12) <450 arcsec |
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Exclusion Zone | < 2 mm | |||||
Surface Roughness | Ra < 1.5 nm (10 μm × 10 μm) | |||||
Package | Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. |
Sales agent: Furuuchi Chemical Corporation
6-17-17 Minami-Oi Shinagawa-ku
Tokyo, 140-0013
Phone 03-3762-8161
Faximile 03-3766-8310
6-17-17 Minami-Oi Shinagawa-ku
Tokyo, 140-0013, Japan
Business hours
Weekdays 9:00-17:00