Single Crystals
SrTiO3 and TiO2 are produced with Furuuchi's advanced technogy applied Verneuil method. Nb or La-doped SrTiO3 and Nb-doped TiO2 Conductive-type wafers are avaialbe.
SrTiO3
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| Nb-dope amount | La-dope amount | ||
|---|---|---|---|
| 0.01wt% | (0.02at%) | 0.075wt% | (0.10at%) |
| 0.02wt% | (0.04at%) | 0.38wt% | (0.50at%) |
| 0.05wt% | (0.10at%) | 0.75wt% | (0.99at%) |
| 0.1wt% | (0.20at%) | 1.9wt% | (2.49at%) |
| 0.2wt% | (0.39at%) | 3.73wt% | (4.87at%) |
| 0.5wt% | (0.98at%) | - | - |
| 1wt% | (1.96at%) | - | - |
TiO2
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| Nb-dope amount | |
|---|---|
| 0.01wt% | (0.01at%) |
| 0.05wt% | (0.04at%) |
| 0.5wt% | (0.43at%) |
| 1wt% | (0.86at%) |
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Alkai Halide Single Crystals
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Gallium Nitride (GaN)
As of February 1st, 2025, we do not carry Gallium Nitride due to the export restriction enforced in the country of origin.
